Development of Resistance Welding for Silicon Carbide

Development of Silicon Carbide Semiconductor Devices for High Temperature Applications

The semiconducting properties of electronic grade silicon carbide (SiC) crystals, such as its wide energy bandgap, make it particularly attractive for high temperature applications. Applications for high temperature electronic devices include instrumentation for engines under development, engine control and condition monitoring systems, and power conditioning and control systems for space platf...

Grain boundary resistance to amorphization of nanocrystalline silicon carbide

Under the C displacement condition, we have used molecular dynamics simulation to examine the effects of grain boundaries (GBs) on the amorphization of nanocrystalline silicon carbide (nc-SiC) by point defect accumulation. The results show that the interstitials are preferentially absorbed and accumulated at GBs that provide the sinks for defect annihilation at low doses, but also driving force...

Silicon Nitride and Silicon Carbide

Porous Silicon Carbide for MEMS

Metal assisted photochemical etching (MAPCE) of 4H Silicon Carbide (SiC) was utilized to generate locally defined porous areas on single crystalline substrates. Therefore, Platinum (Pt) was sputter deposited on 4H-SiC substrates and patterned with photolithography and lift off. Etching was performed by immersing the Pt coated samples into an etching solution containing sodium persulphate and hy...

Boron carbide/n-silicon carbide heterojunction diodes